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d a t a sh eet product speci?cation supersedes data of 1997 nov 27 file under integrated circuits, ic19 1999 aug 24 integrated circuits oq2545hp; OQ2545BHP sdh/sonet stm16/oc48 laser drivers
1999 aug 24 2 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP features differential 50 w inputs for direct connection to current-mode logic (cml) outputs internal retiming to minimize jitter (oq2545hp only) input clock phase margin of 320 at 2.5 gbits/s (oq2545hp only) rf output current sinking capability of 60 ma bias output current sinking capability of 100 ma ttl compatible control inputs loop mode for system testing continuous output monitoring power dissipation <1500 mw (for typical application) low cost lqfp48 plastic package. applications digital fibre optical modulation driver in stm16/oc48 short, medium and long haul optical transmission systems optical modulation driver in high-speed data networks high current driver for electro-optical converters high current electrical line driver. general description the oq2545 is a driver ic intended to be used with a directly modulated laser diode or with an electro absorption modulator (eam) in sdh/sonet 2.5 gbits/s optical transmission systems. the ic features differential data inputs. loop mode inputs are provided for system testing, along with an output for continuous monitoring. in addition, the oq2545hp features differential clock inputs for internal retiming resulting in a better jitter performance. the ic has bias and modulating current outputs, the levels of which can be set separately. as an additional safety measure, the active high-level input for automatic laser shutdown (pin als) can be used to switch off the laser modulation and bias currents. although the ic is intended for 2.5 gbits/s optical transmission systems, it can be used in any application requiring high current drive at high frequencies. the ic is transparent from input to output. ordering information type number package name description version oq2545hp lqfp48 plastic low pro?le quad ?at package; 48 leads; body 7 7 1.4 mm sot313-2 OQ2545BHP
1999 aug 24 3 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP block diagrams fig.1 block diagram of oq2545hp. (1) pins 1, 12, 13, 24, 25, 36, 37 and 48. (2) pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47. handbook, full pagewidth din dioa dinq dloop dloopq cin cinq cloop cloopq ff oq2545hp analog section band gap reference monitor buffer pre- amplifier modulation driver emitter followers 19 10 39 40 18 5, 6 7, 8 45 43 17 42 16 15 44 enl smod v ee1 ampadj efadj als mon monq ibias sibias la laq simod bgcap gnd (2) 14 v ee2 (1) 8 v cc 46 33 3 34 22 21 30 31 28 27 mgk368 digital section
1999 aug 24 4 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP fig.2 block diagram of OQ2545BHP. (1) pins 1, 12, 13, 24, 25, 36, 37 and 48. (2) pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47. handbook, full pagewidth din dioa dinq dloop dloopq i.c. i.c. i.c. i.c. ff OQ2545BHP analog section band gap reference monitor buffer pre- amplifier modulation driver emitter followers 19 10 39 40 18 5, 6 7, 8 45 43 17 42 16 15 44 enl smod v ee1 ampadj efadj als mon monq ibias sibias la laq simod bgcap gnd (2) 14 v ee2 (1) 8 v cc 46 33 3 34 22 21 30 31 28 27 mgl727 digital section
1999 aug 24 5 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP pinning symbol pin type (1) description oq2545hp OQ2545BHP v ee2 1 1 s supply voltage for analog section ( - 6.5 v) gnd 2 2 s ground supply dioa 3 3 a temperature sensing diode array connection gnd 4 4 s ground supply la 5 5 o laser modulation current output la 6 6 o laser modulation current output laq 7 7 o inverted laser modulation current output laq 8 8 o inverted laser modulation current output gnd 9 9 s ground supply ibias 10 10 o laser bias current control output gnd 11 11 s ground supply v ee2 12 12 s supply voltage for analog section ( - 6.5 v) v ee2 13 13 s supply voltage for analog section ( - 6.5 v) gnd 14 14 s ground supply efadj 15 15 ai input for emitter follower current adjustment ampadj 16 16 ai input for preampli?er current adjustment smod 17 17 i input for data polarity switch simod 18 18 i input for rf modulated output current control sibias 19 19 i input for dc output current control gnd 20 20 s ground supply dloopq 21 21 i inverted loop mode data input dloop 22 22 i loop mode data input gnd 23 23 s ground supply v ee2 24 24 s supply voltage for analog section ( - 6.5 v) v ee2 25 25 s supply voltage for analog section ( - 6.5 v) gnd 26 26 s ground supply cloopq 27 - i inverted loop mode clock input i.c. - 27 - internally connected; internal resistance of 50 w to gnd cloop 28 - i loop mode clock input i.c. - 28 - internally connected; internal resistance of 50 w to gnd gnd 29 29 s ground supply cin 30 - i clock input i.c. - 30 - internally connected; internal resistance of 50 w to gnd cinq 31 - i inverted clock input i.c. - 31 - internally connected; internal resistance of 50 w to gnd gnd 32 32 s ground supply din 33 33 i data input dinq 34 34 i inverted data input
1999 aug 24 6 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP note 1. pin type abbreviations: o = output, i = input, s = power supply and a = analog function. gnd 35 35 s ground supply v ee2 36 36 s supply voltage for analog section ( - 6.5 v) v ee2 37 37 s supply voltage for analog section ( - 6.5 v) gnd 38 38 s ground supply monq 39 39 o inverted monitor data output mon 40 40 o monitor data output gnd 41 41 s ground supply v ee1 42 42 s supply voltage for digital section ( - 4.5 v) bgcap 43 43 a connection for band gap reference decoupling capacitor als 44 44 i automatic laser shutdown control input enl 45 45 i loop mode enable input (active low) v cc 46 46 s positive supply voltage for ttl interface (+5 v) gnd 47 47 s ground supply v ee2 48 48 s supply voltage for analog section ( - 6.5 v) symbol pin type (1) description oq2545hp OQ2545BHP fig.3 pin configuration of oq2545hp. handbook, full pagewidth 1 2 3 4 5 6 7 8 9 10 11 36 35 34 33 32 31 30 29 28 27 26 13 14 15 16 17 18 19 20 21 22 23 48 47 46 45 44 43 42 41 40 39 38 12 24 37 25 oq2545hp mgk367 v ee2 gnd dinq din cinq cin gnd cloop cloopq gnd v ee2 gnd gnd v cc enl als bgcap v ee1 mon monq gnd v ee2 v ee2 gnd v ee2 gnd dioa gnd la la laq gnd gnd v ee2 laq ibias gnd efadj ampadj smod simod sibias gnd dloop gnd v ee2 v ee2 dloopq
1999 aug 24 7 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP fig.4 pin configuration of OQ2545BHP. handbook, full pagewidth 1 2 3 4 5 6 7 8 9 10 11 36 35 34 33 32 31 30 29 28 27 26 13 14 15 16 17 18 19 20 21 22 23 48 47 46 45 44 43 42 41 40 39 38 12 24 37 25 OQ2545BHP mgl728 v ee2 gnd dinq din i.c. i.c. gnd i.c. i.c. gnd v ee2 gnd gnd v cc enl als bgcap v ee1 mon monq gnd v ee2 v ee2 gnd v ee2 gnd dioa gnd la la laq gnd gnd v ee2 laq ibias gnd efadj ampadj smod simod sibias gnd dloop gnd v ee2 v ee2 dloopq
1999 aug 24 8 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP functional description the oq2545(b)hp can be divided into two functional blocks (see fig.1): a digital section on the input side an analog section on the output side. the data input buffers present an impedance of 50 w to the data stream on the differential data inputs (see fig.5). the input data is then fed to a multiplexer where normal mode (pin enl = high-level) or loop mode (pin enl = low-level) inputs are selected. for driving an eam, a second multiplexer inverts the input signals when pin smod is connected to v ee1 . an external clock (oq2545hp only) connected to a master-slave flip-flop is then used to retime the data. this reduces jitter on the data signal to a minimum. the preamplifier boosts the signal to a suitable level for the modulation driver. two emitter followers provide the necessary signal isolation between the preamplifier and the high current modulation driver. the bias currents for the preamplifier and the emitter followers contain an output level dependent component, along with an independent component. the output level dependent component is controlled via the signal on pin simod and the operational amplifier, which also sets the modulation driver level. the independent component is adjusted by means of the signal on pin ampadj (preamplifier) and pin efadj (emitter followers). the signal on pin ampadj also controls the shape of the output signal on pins la and laq. an independent adjustable on-chip bias current source is provided to drive directly a modulated laser diode. pin sibias is used to set the bias current level. the output current at pin ibias will be approximately 106 times the input current at pin sibias. a similar arrangement is used to control the modulation current at pins la and laq. the output current at pins la and laq is proportional to the input current at pin simod. the coefficient depends on the load impedance on pins la and laq and on the voltage setting of pin smod (see section modulation current setting). pin als is a ttl compatible input and at high-level it can be used to switch off all current sources. this function makes it possible to implement safety measures that will switch off the circuit in the event of an optical system malfunction. the buffered differential 50 w outputs (pins mon and monq) can be used to monitor the optically modulated data. loop mode the loop mode is provided for system testing. a low-level on pin enl selects the loop mode. when pin enl is left open-circuit, it is pulled to a high-level (ttl) by an internal pull-up resistor. fig.5 schematic for cml differential inputs. h andbook, full pagewidth mgl731 v ee1 dinq, dloopq, cinq, cloopq din, dloop cin, cloop 50 w 50 w
1999 aug 24 9 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP automatic laser shutdown a high-level (ttl) on pin als switches off the laser modulation and bias currents. this function allows the circuit to be switched off in the event of an optical system malfunction or for system maintenance. when not connected, pin als is pulled to a low-level (ttl) by an internal pull-down resistor. data monitoring pins mon and monq can be used as data monitor outputs. they need to be ac-coupled, e.g. to a 50 w matched rf amplifier with sufficient bandwidth. output polarity selection pin smod is used to set the correct logic assignment between the data input on pins din and dinq (or pins dloop and dloopq) and the data output on pins la, laq, mon and monq. this is necessary because a directly modulated laser diode and an eam have different output voltage requirements. if a laser diode is used and connected between pin la and ground, a high current through pin la corresponds to a logic high, while a low current through pin la corresponds to a logic low. the opposite is the case with an eam, where a high current (i.e. a large voltage across the load) activates the eam, thereby causing a logic low. therefore, an inversion is needed between input and output. this happens in the second multiplexer when pin smod is connected to v ee1 . when left open-circuit, pin smod is pulled-up to ground, which is the laser diode setting. modulation current setting pin simod is used to adjust the modulation current on pins la and laq (see fig.6). this is achieved by regulating the internal current mirror, which serves as a reference current for the modulation driver. the reference port of the control operational amplifier is connected to ground through an internal 4 k w resistor, thus establishing a virtual earth on pin simod (dc level is 0 v). an external (approximately) 4 k w resistor connected to an adjustable voltage source is needed to regulate the internal current mirror. this adjustable voltage source can be a part of the laser current control box (see fig.15). the ratio between the current into pin simod and the total modulation current depends on the polarity setting via pin smod. when pin smo d=0v the value of i mod =92 i simod (approximately) and whereas pin smod = v ee1 the value of i mod = 107 i simod (approximately). fig.6 schematic of laser modulation outputs. handbook, full pagewidth k i simod i simod simod 4 k w 100 w 100 w v ee2 71 k i simod (1) la laq mgl733 + - (1) k = 1.3 when pin smod = 0 v. k = 1.5 when pin smod = v ee1 .
1999 aug 24 10 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP due to the internal resistors of 100 w between pins la and laq to gnd, a part of the total modulation current i mod flows internally (see fig.7). therefore the modulation current can be written as: i mod =i la(int) +i la(ext) . the ratio is: where r la is the external impedance between pins la and gnd. a similar argument holds for pin laq, with an external impedance of r laq . bias current setting an independent adjustable on-chip bias current source is provided for when the ic is driving directly a modulated laser diode. pin sibias is used to adjust the bias current at pin ibias, in a similar arrangement to that used for adjusting the modulation current. the reference port of the control operational amplifier is connected to ground through an internal 4 k w resistor, thus establishing a virtual earth on pin sibias (dc-level of 0 v). an adjustable voltage source connected to pin sibias through an (approximately) 4 k w resistor is used to regulate the internal current mirror. the maximum output current of 100 ma is achieved with an input voltage of 4 v. in this case, the input current at pin sibias is approximately 1 ma. band gap decoupling capacitor the band gap voltage on pin bgcap should be decoupled to v ee1 with an external 10 nf capacitor to minimize noise. it cannot be used as an external reference voltage for other circuits. preampli?er bias current adjustment the bias current for the preamplifier contains a modulation dependent component and a modulation independent component. the modulation dependent current is adjusted via pin simod. the modulation independent current will be adequate under normal circumstances. however, in some applications it may be necessary to customize the shape of the modulation current. this can be done by adjusting the preamplifier bias current via pin ampadj. when this pin is left open-circuit, the bias current is 0.5 ma and when this pin is connected to ground, the maximum bias current will be approximately 2.5 ma. a resistor can be connected between pin ampadj and ground to adjust the current level within this range. the bias current can be decreased by connecting a resistor between pins ampadj and v ee2 . however, care should be taken as the preamplifier will not be able to drive the modulation driver when the bias current is too low. emitter follower bias current adjustment the bias currents for the emitter followers contain two components: a modulation independent component and a modulation dependent component to be controlled via pin simod. the modulation independent currents (8.2 and 16.4 ma, respectively) are sufficient to ensure the emitter followers operate correctly under normal circumstances. in some applications, however, the eye pattern needs to be optimized. this is achieved by connecting an external resistor between pin efadj and ground. when pin efadj is connected directly to ground, the maximum currents for the two emitter followers will be approximately 25 and 50 ma, respectively. because the emitter followers buffer the signal from the preamplifier, the current range to be adjusted via pin efadj depends on the setting via pin ampadj. grounding and power supply decoupling the ground connection on the pcb needs to be a large copper area fill connected to a common ground plane with as low inductance as possible. the large area fill will improve the heat transfer to the pcb and so aiding cooling of the ic. the power supply pins need to be decoupled using chip capacitors mounted as close as possible to the ic. to avoid high frequency resonance, multiple bypass capacitors should not be mounted at the same location. to minimise low frequency switching noise in the vicinity of the ic, the power supply line should ideally be filtered once using an lc circuit with a low cut-off frequency. i la int () i la ext () ----------------- - r la 100 --------- - = fig.7 total modulation current i mod . i la(int) r la r laq i mod i la(ext) oq2545 100 w 100 w la gnd laq mgl734 + -
1999 aug 24 11 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP rf connections a coupled stripline or microstrip with an odd mode characteristic impedance of 50 w (nominal value) should be used for the differential rf connections on the pcb. this applies to the cml differential line pairs on pins cin and cinq, din and dinq, cloop and cloopq, dloop and dloopq, and mon and monq. in addition, the following lines should not differ in length by more than 10 mm: lines to pins din, dinq, cin and cinq lines to pins cloop, cloopq, dloop and dloopq. esd protection in order to achieve high frequency performance, it has been necessary to make adjustments to the standard esd protection scheme. inputs on pins din, dinq, cin, cinq, dloop, dloopq, cloop and cloopq and outputs on pins mon and monq are protected by a reduced esd structure. the outputs on pins la and laq have no protection against esd, so extra care should be taken with these pins. power consumption the total power consumption of the oq2545(b)hp depends strongly on the application. a rough guideline is given to estimate the power consumption for a specific application. the total power dissipation (p tot ) consists of the following terms: p tot =p vee1 +p vcc +p vee2 - (p la +p laq +p ibias ) where 1. p vee1 and p vcc represent the power consumption terms corresponding with the supplies v ee1 and v cc , required for the digital section and the ttl interfaces. these 2 terms are application independent and only depend on the process spread and supply voltages. values can be found in chapter characteristics. 2. p vee2 =i ee2 ? v ee2 ? represents the power consumption of the analog section, including the modulation current and bias current. it is mainly determined by the magnitude of the modulation current and bias current and the additional biasing currents of the preamplifier and emitter followers. the supply current is the summation: i ee2 =55ma+1.5 i mod +i ibias +3 i ampadj +55 i efadj where i ampadj and i efadj are the currents through pins ampadj and efadj, respectively. these figures are valid for nominal supply voltage and temperature and are given for rough indication only. 3. p la , p laq and p ibias represent the dissipation in the external load (laser or eam), caused by the modulation and bias current. the expressions are: p la = 0.5 i la(ext) ? v la ? , p laq = 0.5 i laq(ext) ? v laq ? and p ibias =i ibias ? v ibias ? . the factor 0.5 represents the fact that, for a (scrambled) random data pattern, the modulation switch will be switched to either side 50% of the time integrated over many cycles. v la and v laq are the voltages on pins la and laq when the modulation current flows through pins la and laq, respectively and the values depend on the external laser or eam supply voltage, the forward diode voltage drop and additional loads. to increase the dissipation in the external load and thereby decreasing the dissipation in the ic, the values of ? v la ? or ? v laq ? can be increased by adding additional external resistors. a minimum value of v la and v laq is required for proper operation of the ic. a similar argument is valid for power consumption due to the bias current. it should be noted that this is important, because it provides an easy way to lower the power dissipation of the ic. example consider the following example to illustrate the calculation of p tot . a laser diode operates at 0.3 mw (optical low) and 3 mw (optical high), i.e. an extinction ratio of 10 db. for this laser type this requires i bias = 20 ma and i la(ext) = 40 ma (see fig.8). the series resistance of the laser is 30 w . therefore the ratio is: consequently, a total i mod = (130/100) 40 = 52 ma will be generated by the ic. the impedance connected to pin laq is 30 w as well. as a result also i laq(ext) = 40 ma and i laq(int) =12ma (see fig.9). in first instance the eye pattern is of adequate quality and the preamplifier and emitter follower do not need additional bias current, i.e. pins ampadj and efadj can be left open-circuit. i la int () i la ext () ----------------- - 30 100 --------- - =
1999 aug 24 12 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP the current i bias is supplied through an rf choke with a high rf resistance and a low dc resistance (e.g. 5 w ). when the laser is in the high (emitting) state, the voltage drop across the diode and the modulation current of 40 ma in combination with the bias current of 20 ma through the 30 w laser resistance results in: v la = - 1.2 - 30 (0.040 + 0.020) = - 3.0 v no current through the 30 w resistor gives v laq =0v. when the laser is in the low (dark) state, the bias current of 20 ma results in v la = - 1.2 - 30 0.020 = - 1.8 v the modulation current of 40 ma through the 30 w resistor sets the value v laq =30 0.040 = - 1.2 v the rf choke causes v ibias to be stationary and equal to the average value of v la minus the small voltage drop across the choke (bias current of 20 ma through 5 w ): v ibias = 0.5 ( - 3.0 - 1.8) - 0.020 5= - 2.5 v table 1 estimate total power consumption note 1. 153 ma = i ee2 (55 + 1.5 52+20+3 0+55 0). thermal requirements and cooling the maximum allowed junction temperature for normal operation is 125 c. with an application specific estimated power dissipation and the maximum ambient temperature, the required thermal resistance from junction to ambient r th(j-a) can be derived. this value strongly depends on the pcb layout for the ic. it is highly recommended to use copper area fills around the 8 corner leads (pins v ee2 ) of the ic. if a single copper layer pcb with a copper thickness of 0.034 mm is used, square copper area fills of 10 10 mm around the corner leads will result in an approximate value for r th(j-a) = 35 k/w. this value originates from model calculations and is for indication only. lower values for r th(j-a) can be obtained with multilayer pcbs. if the required power dissipation is not known, but the maximum ambient temperature is fixed, the maximum allowed dissipation as a function of r th(j-a) can be derived, namely: the maximum allowed dissipation to prevent overheating as a function of the thermal resistance that is achieved in the application is shown in fig.12. the maximum ambient temperature in this application is 85 c (i.e. 125 - 85=40 c temperature head room). a low r th(j-a) is recommended. p vee1 70 ma 4.5 v 315 mw p vcc 2ma 5 v 10 mw p vee2 153 ma (1) 6.5 v 995 mw p la 0.5 40 ma 3.0 v 60 mw p laq 0.5 40 ma 1.2 v 24 mw p ibias 20 ma 2.5 v 50 mw p tot p vee1 +p vcc +p vee2 - (p la +p laq +p ibias ) 1186 mw p tot 125 t amb max () C r th j a C () ------------------------------------------ = fig.8 laser high light emitting. handbook, full pagewidth i la(int) 30 w 30 w i mod i la(ext) oq2545 100 w 100 w laq 1.2 v gnd la ibias i bias emi choke laser mgl736 i bias v ee2
1999 aug 24 13 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP fig.9 laser low dark. handbook, full pagewidth i laq(int) 30 w 30 w i mod i laq(ext) oq2545 100 w 100 w laq 1.2 v gnd la ibias i bias emi choke laser mgl735 i bias v ee2 limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics symbol parameter min. max. unit v cc supply voltage for ttl interface - 0.5 +6.0 v v ee1 supply voltage for digital section - 6.0 +0.5 v v ee2 supply voltage for analog section - 7.5 +0.5 v v n dc voltage on pins din, dinq, dloop, dloopq, cin, cinq, cloop and cloop - 1.0 +0.5 v pins mon and monq - 2.0 +0.5 v pins als and enl - 0.5 v cc + 0.5 v pins efadj, apadj, simod and sibias v ee2 - 0.5 0.5 v pins smod and bgcap v ee1 - 0.5 0.5 v i n dc current on pins la and laq - 80 ma pin ibias - 110 ma pins mon and monq - 20 ma pin dioa - 10 ma t j junction temperature - 150 c t stg storage temperature - 65 +150 c symbol parameter value unit r th(j-s) thermal resistance from junction to solder point 27 k/w
1999 aug 24 14 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP characteristics measured at typical supply voltages; all outputs with 50 w load; t amb = - 40 to +85 c. symbol parameter conditions min. typ. max. unit supplies v cc supply voltage for ttl interface 4.75 5.0 5.25 v v ee1 supply voltage for digital section - 4.75 - 4.5 - 4.25 v v ee2 supply voltage for analog section - 6.85 - 6.5 - 6.15 v i cc supply current for ttl interface - 23ma i ee1 supply current for digital section oq2545hp - 70 90 ma OQ2545BHP - 50 70 ma i ee2 supply current for analog section normal operation; note 1 - 275 - ma laser shutdown - 58ma p power dissipation maximum bias and modulation current; note 2 - 1984 - mw laser shutdown - 350 - mw t amb ambient temperature - 40 - +85 c t j junction temperature -- 125 c cml data and clock inputs: pins din, dinq, dloop, dloopq, cin, cinq, cloop and cloopq; note 3 v i(p-p) input voltage (peak-to-peak value) 100 250 500 mv v io input offset voltage - 25 0 +25 mv v i dc input voltage - 600 - 200 +250 mv z i input impedance single-ended 40 50 60 w ttl input: pin enl; note 4 v il low-level input voltage - 0.4 0.8 v v ih high-level input voltage 2.4 4.0 - v i il low-level input current - 500 - 0 m a i ih high-level input current 0 - 250 m a ttl input: pin als; note 4 v il low-level input voltage - 0.4 0.8 v v ih high-level input voltage 2.4 4.0 - v i il low-level input current - 90 - 0 m a i ih high-level input current 0 - 600 m a t res response time note 5 -- 1.5 ms current source control inputs: pins simod and sibias; note 6 k bias bias current converter coef?cient note 7 - 120 -- k mod modulation current converter coef?cient note 8 diode (smod = 0 v) - 92 -- eam (smod = v ee1 ) - 106 -- b bandwidth of unity gain ampli?er note 9 - 10 - mhz d g gain peaking note 10 - 16db sr slew rate - 4 - v/ m s
1999 aug 24 15 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP notes 1. value is based on: a) external modulation current of 60 ma through an external load of 33 w and an internal modulation current of 20 ma giving a total modulation current of 80 ma. b) bias current is 100 ma. c) pins ampadj and efadj are left open-circuit. preampli?er adjustment: pin ampadj i i input control current -- 3ma emitter follower adjustment: pin efadj i i input control current -- 3ma band gap decoupling connection: pin bgcap v bgcap band gap decoupling voltage note 11 - 2.05 - 1.6 - 1.25 v temperature diodes: pin dioa v dioa temperature diode voltage note 12 1.6 2.0 2.5 v laser modulation outputs: pins la and laq; note 13 i ol low-level output current note 14 5 - 60 ma i oh high-level output current -- 2ma i o(off) output current during laser shutdown -- 200 m a v o output voltage - 3.5 - 0v d duty factor note 15 43 50 57 % t r rise time note 16 - 155 200 ps t f fall time note 16 - 160 200 ps j o(p-p) output jitter (peak-to-peak value) - 15 40 ps z o output impedance single-ended 80 100 120 w br bit rate note 17 - 2.48832 - gbits/s bias current output: pin ibias i o output current note 18 1 - 100 ma i o(off) output current during laser shutdown -- 200 m a v o output voltage note 19 - 5.5 - 0v monitor outputs: pins mon and monq v o(p-p) output voltage (peak-to-peak value) 70 115 160 mv v o dc output voltage -- 1.4 - v z o output impedance single-ended 40 50 60 w clock phase margin: pins cin and cinq (oq2545hp only); see fig.13 t cy(cin) cin cycle time - 402 - ps t su set-up time 100 20 - ps t h hold time 100 20 - ps j m clock phase margin 180 320 - deg symbol parameter conditions min. typ. max. unit
1999 aug 24 16 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP 2. value based on: a) external modulation current of 60 ma and internal modulation current of 20 ma giving a total modulation current of 80 ma. b) bias current is 100 ma; see section power consumption for details on application specific power dissipation. c) pins ampadj and efadj are left open-circuit. d) pins la and laq both terminated with 33 w . 3. see fig.10 for cml symbol definitions. all cml inputs are terminated internally using 50 w on-chip resistors to ground. 4. since the ttl inputs are static, no timing specifications are given in this data sheet. 5. the response time is the time it takes the laser currents (i la and i ibias ) to fall below 1 ma after pin als = high-level. 6. the values are valid for capacitive loads of up to 50 pf connected to these input pins; voltage controlled with 3.9 k w source resistance. 7. 8. where i mod is the total (internal + external) modulation current. 9. the current converters consist of operational amplifiers used as unity gain amplifiers and current mirrors. the specified characteristics apply for the transfer function from pin simod to pins la and laq or from pin sibias to pin ibias. 10. although the operational amplifiers are configured as unity gain amplifiers, the response tends to peak close to the roll-off area. 11. to suppress supply noise in the band gap, an external capacitor of 10 nf can be connected between this pin and v ee1 . 12. three series connected diodes have been integrated for measuring the junction temperature. the anode of this diode array is connected to pin dioa. the cathode is connected internally to v ee2 . with a current of 1 ma, the anode voltage (measured with reference to v ee2 ) will be somewhere within the specified range, depending on temperature. this voltage will show a - 6 mv/ c gradient over temperature. 13. values are measured electrically and unfiltered (see fig.11): a) pins ampadj and efadj are left open-circuit for all measurements. b) the external load is 33 w on pins la and laq. c) the external modulation current is 60 ma. d) optical rise and fall times, duty factor and jitter depend on the applied filtering and the matching network between pins la and laq and the optical device used. 14. the currents flowing into pins la and laq are not equal to the internal rf modulation current because of an additional current in the internal termination resistance. 15. duty factor is defined as the data stream should be 010101010101... 16. rise and fall times are between 10% and 90% of the peak values. 17. all rf tests are done at 2.48832 gbits/s (stm16/oc48 rate). 18. the dc current into pin ibias is not equal to the internal dc current because of an additional current from the internal termination resistors. 19. to avoid saturation of the current source on pin ibias, the voltage level on pin ibias should never be allowed to fall below the specified minimum. k bias i ibias i sibias ----------------- - = k mod i mod i simod ----------------- - = t wh t cy --------- 100%
1999 aug 24 17 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP fig.10 logic level symbol definitions for cml inputs. handbook, full pagewidth mgl730 v io v i(max) v i(min) v i(p-p) gnd cml input fig.11 set-up for electrical measurement of rf parameters. 50 w oq2545 oscilloscope mgl737 100 w 50 w 100 w tester interface la, laq coax fig.12 maximum power dissipation as a function of the thermal resistance. handbook, halfpage 10 4 3 2 1 0 20 30 p tot (w) r th(j-a) (k/w) 40 mbk077 measured at t amb =85 c.
1999 aug 24 18 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP timing characteristics input timing (oq2545hp only) set-up and hold time definitions are illustrated in fig.13. the timing characteristics are applicable in both normal and loop modes. fig.13 cml input timing (oq2545hp only). handbook, full pagewidth t h t su 80 mv valid data 50% din cin t cy(cin) mgk369 output timing fig.14 modulation output timing. handbook, full pagewidth 90% 50% 10% j o(p-p) la t wh t cy t r t f mgk370
1999 aug 24 19 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP application information fig.15 application schematic oq2545hp with laser diode. (1) all v ee2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) all gnd pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the pcb ground plane. handbook, full pagewidth mgk371 3 to 4 k w cin mux (oq2535) compensation network laser current control optical monitor output optical fibre laser diode 30 cinq 31 din 33 dinq 34 cloop dcr (oq2541) oq2545hp 28 cloopq 27 dloop 22 dloopq 21 ampadj 16 efadj 15 40 7, 8 5, 6 10 v bias v mod 39 44 from main controller module rf amp mon als 45 17 enl 10 nf 18 43 simod 3 to 4 k w 0 to 4 v 25 w 19 sibias (2) gnd laq la ibias 42 v ee1 (1) v ee2 46 v cc 3 dioa bgcap monq smod electrical monitor output 14 8 - 4.5 v - 6.5 v + 5 v
1999 aug 24 20 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP fig.16 application schematic OQ2545BHP with laser diode. (1) all v ee2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) all gnd pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the pcb ground plane. handbook, full pagewidth mgl729 3 to 4 k w i.c. i.c. i.c. i.c. mux (oq2535) compensation network laser current control optical monitor output optical fibre laser diode 30 31 din 33 dinq 34 dcr (oq2541) OQ2545BHP 28 27 dloop 22 dloopq 21 ampadj 16 efadj 15 40 7, 8 5, 6 10 39 44 from main controller module rf amp mon als 45 17 enl 10 nf 18 43 simod 3 to 4 k w 0 to 4 v 25 w 19 sibias (2) gnd laq la ibias 42 v ee1 (1) v ee2 46 v cc 3 dioa bgcap monq smod electrical monitor output 14 8 - 4.5 v - 6.5 v + 5 v v bias v mod
1999 aug 24 21 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP fig.17 application schematic oq2545hp with electro absorption modulator (eam). (1) all v ee2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) all gnd pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the pcb ground plane. handbook, full pagewidth mgk372 3 to 4 k w cin mux (oq2535) optical fibre laser diode bias current control eam 30 cinq 31 din 33 dinq 34 cloop dcr (oq2541) oq2545hp 28 cloopq 27 dloop 22 dloopq 21 ampadj 16 efadj 15 40 7, 8 5, 6 39 44 from main controller module rf amp mon als 45 enl 10 nf 18 43 17 smod simod 50 w (2) gnd laq la 42 v ee1 (1) v ee2 46 v cc bgcap v ref - 4.5 v - 6.5 v + 5 v monq electrical monitor output 14 8 optical monitor output 3 10 dioa ibias 19 sibias
1999 aug 24 22 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP package outline unit a max. a 1 a 2 a 3 b p ce (1) eh e ll p z y w v q references outline version european projection issue date iec jedec eiaj mm 1.60 0.20 0.05 1.45 1.35 0.25 0.27 0.17 0.18 0.12 7.1 6.9 0.5 9.15 8.85 0.95 0.55 7 0 o o 0.12 0.1 0.2 1.0 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.75 0.45 sot313-2 94-12-19 97-08-01 d (1) (1) (1) 7.1 6.9 h d 9.15 8.85 e z 0.95 0.55 d b p e e b 12 d h b p e h v m b d z d a z e e v m a 1 48 37 36 25 24 13 q a 1 a l p detail x l (a ) 3 a 2 x y c w m w m 0 2.5 5 mm scale pin 1 index lqfp48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm sot313-2
1999 aug 24 23 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1999 aug 24 24 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. package soldering method wave reflow (1) bga, sqfp not suitable suitable hlqfp, hsqfp, hsop, htssop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 aug 24 25 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP notes
1999 aug 24 26 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP notes
1999 aug 24 27 philips semiconductors product speci?cation sdh/sonet stm16/oc48 laser drivers oq2545hp; OQ2545BHP notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 1999 67 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 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